Richardson, TX November 15, 2023 – InterFET, a leading provider of high-performance semiconductor components, is pleased to announce the release of two new articles regarding ESD and Radiation. These resources can be accessed here or on the InterFET website and are designed to assist in understanding crucial design parameters when working with and understanding transistor operation.
ESD and Radiation tolerances are often key factors in designing efficient engineering solutions. Understanding these parameters empower engineers to ensure their designs withstand extreme circumstances, making them exceptionally versatile, reliable, and safe.
InterFET delivers a thorough overview of Electrostatic Discharge (ESD) in electronics, unraveling the intricacies of its potential impact on electronic devices. The exploration extends to the diverse types of ESD damage, accompanied by an in-depth investigation into ESD classification standards and measurements. Highlighting our commitment to excellence, we proudly present our JFETs, adept at navigating even the most challenging Electrostatic Discharge (ESD) environments. They exhibit remarkable resilience levels and impressive tolerances of 3A and M4 in both the Human Body Model (HBM) and Machine Model (MM) classifications respectively. This comprehensive look into the world of ESD stands as an invaluable resource, offering profound insights into the intricacies and design considerations of the electronics and analog realm.
Transitioning into the realm of radiation, our second article dives into the types of radiation and potential consequences of radiation on different silicon devices. The article underscores a pivotal insight centered on the exploration of impactful radiation mitigation strategies, exemplified by the combination of Red Hardening and Shielding techniques. This effective approach is complemented by the innate resilience of JFETs, which is further emphasized by InterFET’s unwavering dedication to utilizing high-quality materials reinforcing the robustness of our engineering designs. Our designs are further backed up by enhanced testing leading to exceptional testing results, which are specified for mission critical NASA operations. Our JFETs demonstrated no Single Event Effects up to 58.8 MeV-cm2/mg in Heavy Ion testing, underscoring their durability in the face of radiation challenges.
InterFET remains committed to providing engineers and the public with the essential resources to enhance their understanding of analog design. With the release of these articles on ESD and Radiation, InterFET upholds its longstanding commitment to delivering top-notch, easily understandable informational sources.
For access to InterFET’s ESD and Radiation articles alongside additional technical information, please refer to the JFET ESD and Radiation Resistance documents, available on the InterFET website.
About InterFET:
InterFET is a leading provider of high-performance semiconductor components, specializing in JFETs and other precision devices. With a strong commitment to innovation and quality, InterFET serves a diverse range of industries, including aerospace, medical, industrial, and telecommunications.
For media inquiries, please contact:
Alan Bennett
[email protected]
(469) 663-9116
