PicoAmp Diodes (PAD)

The InterFET PAD is constructed from the N0001H geometry and is bascially a JFET with the drain and source shorted together. In this configuration it provides an ultra low leakage diode. This diode connected JFET can obtain leakage current levels below 200 femto-amps (fA) at a Vdg of 20V, or less than 100 fA at a Vdg of 5V which is almost immeasurable.

InterFET offers both single and dual PAD versions in various package configurations. For the SOT-23 package it is up to the user to short the source and drain pins.

wdt_ID	PROCESS	PRODUCTS	PACKAGE	BVr (min) V	Ir (max) pA	Vf (typ) V	Vf (max) V	Cr (max) pF	Cdiff (max) pF	CONFIG
1	N0001H	PAD1	TO-18	-45	-1.0	0.8	1.5	0.8		Single
2	N0001H	PAD2	TO-18	-45	-2.0	0.8	1.5	0.8		Single
3	N0001H	PAD5	TO-18	-45	-5.0	0.8	1.5	0.8		Single
4	N0001H	PNPAD1	TO-92-2L	-45	-1.0	0.8	1.5	0.8		Single
5	N0001H	PNPAD2	TO-92-2L	-45	-2.0	0.8	1.5	0.8		Single
6	N0001H	PNPAD5	TO-92-2L	-45	-5.0	0.8	1.5	0.8		Single
7	N0001H	SMPPAD1	SOT-23	-45	-1.0	0.8	1.5	0.8		Single
8	N0001H	SMPPAD2	SOT-23	-45	-2.0	0.8	1.5	0.8		Single
9	N0001H	SMPPAD5	SOT-23	-45	-5.0	0.8	1.5	0.8		Single
10	N0001H	DPAD1	TO-72	-45	-1.0	0.8	1.5	0.8	0.2	Dual
	PROCESS	PRODUCTS	PACKAGE	BVr (min) V	Ir (max) pA	Vf (typ) V	Vf (max) V	Cr (max) pF	Cdiff (max) pF	CONFIG