PicoAmp Diodes (PAD)

The InterFET PAD is constructed from the N0001H geometry and is basically a JFET with the drain and source shorted together. In this configuration it provides an ultra low leakage diode. This diode connected JFET can obtain leakage current levels below 200 femto-amps (fA) at a Vdg of 20V, or less than 100 fA at a Vdg of 5V which is almost immeasurable. 

InterFET offers both single and dual PAD versions in various package configurations. For the SOT-23 package it is up to the user to short the source and drain pins.