PicoAmp Diodes (PAD)
The InterFET PAD is constructed from the N0001H geometry and is bascially a JFET with the drain and source shorted together. In this configuration it provides an ultra low leakage diode. This diode connected JFET can obtain leakage current levels below 200 femto-amps (fA) at a Vdg of 20V, or less than 100 fA at a Vdg of 5V which is almost immeasurable.
InterFET offers both single and dual PAD versions in various package configurations. For the SOT-23 package it is up to the user to short the source and drain pins.

wdt_ID | PRODUCTS | PACKAGE | BVr (min) V | Ir (max) pA | Vf (typ) V | Vf (max) V | Cr (max) pF | Cdiff (max) pF | CONFIG | ORDERING |
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PRODUCTS | PACKAGE | BVr (min) V | Ir (max) pA | Vf (typ) V | Vf (max) V | Cr (max) pF | Cdiff (max) pF | CONFIG | ORDERING |