PicoAmp Diodes (PAD)
The InterFET PAD is constructed from the N0001H geometry and is bascially a JFET with the drain and source shorted together. In this configuration it provides an ultra low leakage diode. This diode connected JFET can obtain leakage current levels below 200 femto-amps (fA) at a Vdg of 20V, or less than 100 fA at a Vdg of 5V which is almost immeasurable.
InterFET offers both single and dual PAD versions in various package configurations. For the SOT-23 package it is up to the user to short the source and drain pins.
|wdt_ID||PRODUCTS||PACKAGE||BVr (min) V||Ir (max) pA||Vf (typ) V||Vf (max) V||Cr (max) pF||Cdiff (max) pF||CONFIG||ORDERING|
|PRODUCTS||PACKAGE||BVr (min) V||Ir (max) pA||Vf (typ) V||Vf (max) V||Cr (max) pF||Cdiff (max) pF||CONFIG||ORDERING|