PicoAmp Diodes (PAD)​

The InterFET PAD (PicoAmp Diodes) utilizes the N0001H geometry and functions similar to a JFET with the drain and source terminals shorted together. This unique configuration creates an ultra-low leakage diode. The diode-connected JFET exhibits leakage current levels below 200 femto-amps (fA) at a Vdg (drain-gate voltage) of 20V, or less than 100 fA at a Vdg of 5V, making it virtually immeasurable.
InterFET offers both single and dual PAD versions, allowing flexibility in package configurations. It is important to note that for the SOT-23 package, users are responsible for manually shorting the source and drain pins. Trust InterFET’s PAD to provide unmatched diode performance and unlock new possibilities in your applications.
to-92-2l part
PROCESSPRODUCTPACKAGEBVr (min) VIr (max) pAVf (typ) VVf (max) VCr (max) pFCdiff (max) pFTYPECONFIGORDERING
PROCESSPRODUCTPACKAGEMODELBVr (min) VIr (max) pAVf (typ) VVf (max) VCr (max) pFCdiff (max) pFTYPECONFIGORDERING
N0001HDPAD1TO-72-45-1.000.801.500.800.20N-CHDUALDirect
N0001HDPAD10TO-72-45-10.000.801.502.000.20N-CHDUALDirect
N0001HDPAD2TO-72-45-2.000.801.500.800.20N-CHDUALDirect
N0001HDPAD5TO-72-45-5.000.801.500.800.20N-CHDUALDirect
N0001HPAD1TO-18-45-1.000.801.500.80N-CHSINGLEDirect
N0001HPAD2TO-18-45-2.000.801.500.80N-CHSINGLEDirect
N0001HPAD5TO-18-45-5.000.801.500.80N-CHSINGLEDirect
N0001HPNPAD1TO-92-2L-45-1.000.801.500.80N-CHSINGLEDirect
N0001HPNPAD2TO-92-2L-45-2.000.801.500.80N-CHSINGLEDirect
N0001HPNPAD5TO-92-2L-45-5.000.801.500.80N-CHSINGLEDirect
N0001HSMPPAD1SOT-23-45-1.000.801.500.80N-CHSINGLEDirect
N0001HSMPPAD2SOT-23-45-2.000.801.500.80N-CHSINGLEDirect
N0001HSMPPAD5SOT-23-45-5.000.801.500.80N-CHSINGLEDirect