The InterFET U.S. facilities and processes have been audited to current MIL-Q-45208 quality standards.
InterFET Company Highlights
developed this custom integrated circuit capability using exclusively n-channel JFET active
components and on-board MOS capacitors and diffused resistors.
This process uses P-well isolation and the same epitaxially formed channels
which provide discrete JFETs their excellent Low-noise and radiation-tolerant
characteristics. Overall performance of sensitive preamplifier and amplifier
applications is improved over hybrids using discrete JFETs due to reduction
of chip and wire parasitics.
is capable of delivering a turnkey product, or, if you provide
CAD Layout, InterFET will work with you by providing the foundry work.
Custom Discrete JFET Designs
- Discrete JFETs with high gain (gm) and high gm/Cm ratio using tetrode
(or dual gate) designs to allow minimum capacitance on the input gate.
- High performance discrete JFET designs to increase radiation tolerance
using very small and tight design rules.
- Unusual discrete JFET designs, such as very large, high voltage, or
other special design considerations.
JFET and IC Research
In addition to providing the broadest range of standard commercial JFET's InterFET Corporation has participated in research projects with Brookhaven National Laboratory, Lawrence Berkeley Laboratories, INFN (Italian Nuclear Physics Institute) and others... plus grants from DOE/SBIR and the Texas Advanced Research Program.
InterFET has substantial experience partnering research and development with scientific and commercial customers that need very low noise, radiation tolerance, cryogenic operation or other special requirements.
New Process JFET Integrated Circuit Technology
JFET ICs are very specialized products, capable of meeting performance needs that no other IC technology can satisfy. Applications demanding extremely low-noise charge or signal amplification, or needing high tolerance to radiation or ESD are well suited to this new technology.